The 3D V-NAND technology uses cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology, to link the 24 layers comprising the 3D cell array.
E.S. Jung (Executive vice president, Semiconductor R&D center, Samsung): The 3D V-NAND will drive disruptive innovation that can be compared to a Digital Big Bang in the global IT industry, and contribute to much more significant growth in the memory market.
The V-NAND SSD comes in 960GB and 480GB versions. The 960GB version offers more than 20 percent increase in sequential and random write speeds by utilizing 64 dies of MLC 3D V-NAND flash, each offering 128GB of storage, with a six-gigabit-per-second SATA interface controller, says Samsung.
The V-NAND SSD also offers 35K program erase cycles and is available in a 2.5 inch form factor with x, y and z-heights of 10cm, 7cm and 7mm.
Samsung began production of the V-NAND SSDs earlier this month.
[Image courtesy: Samsung]