Samsung has unveiled an ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class  process node.

The 4Gb LPDDR3 can transmit data at up to 2,133 megabits per second (Mbps) per pin, which is more than double the performance of the preceding memory standard mobile DRAM (LPDDR2) with a data transmission speed of 800Mbps. This makes it possible to transmit three full HD videos, collectively 17 Gigabytes (GBs) in length, in one second over the new Samsung chip embedded in a mobile device. 

Samsung’s 20nm-class LPDDR3 mobile DRAM enables  display of full HD video on smartphones with five inch-or-larger screens. By adopting Samsung’s 4Gb LPDDR3 mobile DRAM, OEMs can have a 2GB package that includes four of Samsung’s new chips in a single package that meets the memory package height of 0.8 millimeters (mm), says the company. 

Samsung plans to increase production of its advanced 20nm-class mobile DRAM later this year,.